BFR35AP Просмотр технического описания (PDF) - Infineon Technologies

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BFR35AP

Low Noise Silicon Bipolar RF Transistor

Infineon Technologies 

BFR35AP

Electrical Characteristics at TA = 25 °C, unless otherwise specified

Parameter

Symbol

Values

Unit

min. typ. max.

AC Characteristics (verified by random sampling)

Transition frequency

fT

IC = 15 mA, VCE = 8 V, f = 500 MHz

Collector-base capacitance

Ccb

VCB = 10 V, f = 1 MHz, VBE = 0 ,

emitter grounded

3.5 5

- GHz

- 0.39 0.55 pF

Collector emitter capacitance

VCE = 10 V, f = 1 MHz, VBE = 0 ,

base grounded

Cce

- 0.23 -

Emitter-base capacitance

VEB = 0.5 V, f = 1 MHz, VCB = 0 ,

collector grounded

Ceb

- 0.64 -

Minimum noise figure

IC = 2 mA, VCE = 6 V, ZS = ZSopt,

f = 900 MHz

f = 1.8 GHz

NFmin

dB

-

1.4

-

-

2

-

Power gain, maximum available1)

IC = 15 mA, VCE = 8 V, ZS = ZSopt,

ZL = ZLopt, f = 900 MHz

f = 1.8 GHz

Gma

-

16

-

- 10.5 -

Transducer gain

IC = 15 mA, VCE = 8 V, ZS = ZL = 50Ω,

f = 900 MHz

|S21e|2

-

13

dB

-

f = 1.8 GHz

-

7.5

-

1Gma = |S21/S12| (k-(k2-1)1/2)

3

2013-11-21

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