IXFR80N15Q Просмотр технического описания (PDF) - IXYS CORPORATION
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IXFR80N15Q Datasheet PDF : 2 Pages
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IXFR 80N15Q
Symbol
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDS = 10 V; ID = IT
Notes 2, 3
VGS = 0 V, VDS = 25 V, f = 1 MHz
VGS = 10 V, VDS = 0.5 • VDSS, ID = IT
RG = 2 W (External), Notes 2, 3
VGS = 10 V, VDS = 0.5 • VDSS, ID = IT
Notes 2, 3
35 50
S
4600
pF
1400
pF
680
pF
30
ns
55
ns
68
ns
20
ns
180
nC
39
nC
85
nC
0.40 K/W
0.15
K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IS
VGS = 0 V
ISM
Repetitive; Note 1
VSD
IF = IS, VGS = 0 V, Notes 2, 3
t
rr
Q
RM
I
F
=
50A,-di/dt
=
100
A/ms,
V
R
=
100
V
IRM
80 A
320 A
1.5 V
200 ns
1.2
mC
10
A
Note: 1. Pulse width limited by T
JM
2. Pulse test, t £ 300 ms, duty cycle d £ 2 %
3. IT = 40A
ISOPLUS 247TM Outline
Terminals:
1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Dim. Millimeter
Min. Max.
A 4.83 5.21
A1 2.29 2.54
A2 1.91 2.16
b 1.14 1.40
b1 1.91 2.13
b2 2.92 3.12
C 0.61 0.80
D 20.80 21.34
E 15.75 16.13
e
5.45 BSC
L 19.81 20.32
L1 3.81 4.32
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
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