DTA114TUAT106_09 Просмотр технического описания (PDF) - ROHM Semiconductor
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DTA114TUAT106_09 Datasheet PDF : 3 Pages
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DTA114TM / DTA114TE / DTA114TUA / DTA114TKA
Packaging specifications
Package
Package type
Code
VMT3
Taping
T2L
Part No.
Basic ordering
unit (pieces)
8000
DTA114TM
DTA114TE
−
DTA114TUA
−
DTA114TKA
−
EMT3
Taping
TL
3000
−
−
−
UMT3
Taping
T106
3000
−
−
−
SMT3
Taping
T146
3000
−
−
−
Absolute maximum ratings (Ta=25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Limits
Symbol
Unit
DTA114TM DTA114TE DTA114TUA DTA114TKA
VCBO
−50
V
VCEO
−50
V
VEBO
−5
V
IC
−100
mA
PC
150
200
mW
Tj
150
°C
Tstg
−55 to +150
°C
Electrical characteristics (Ta=25C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
Transition frequency
∗ Characteristics of built-in transistor
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
R1
fT ∗
Min. Typ. Max. Unit
Conditions
−50 −
−
V IC=−50μA
−50
−
−
V IC=−1mA
−5
−
−
V IE=−50μA
−
− −0.5 μA VCB=−50V
−
− −0.5 μA VEB=−4V
−
− −0.3 V IC/IB=−10mA/−1mA
100 250 600
− VCE=−5V, IC=−1mA
7
10 13 kΩ
−
−
250
−
MHz VCE=−10V, IE=5mA, f=100MHz
Electrical characteristic curves
1k
VCE=−5V
500
200
100
Ta=100°C
25°C
50
−40°C
20
10
5
2
1
−100μ −200μ −500μ −1m −2m −5m −10m −20m −50m−100m
COLLECTOR CURRENT : IC (A)
Fig.1 DC current gain vs. collector
current
−1
lC/lB=20
−500m
−200m
Ta=100°C
25°C
−100m
−40°C
−50m
−20m
−10m
−5m
−2m
−1m
−100μ −200μ −500μ −1m −2m −5m −10m −20m −50m−100m
COLLECTOR CURRENT : IC (A)
Fig.2 Collector-emitter saturation
voltage vs. collector current
Data Sheet
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○c 2009 ROHM Co., Ltd. All rights reserved.
2009.06 - Rev.B
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