HGTG30N60A4 Просмотр технического описания (PDF) - Fairchild Semiconductor

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HGTG30N60A4

600 V SMPS IGBT

Fairchild Semiconductor 

HGTG30N60A4

Data Sheet

November 2013

File Number 4829

600 V SMPS IGBT

The HGTG30N60A4 combines the best features of high

input impedance of a MOSFET and the low on-state

conduction loss of a bipolar transistor. This IGBT is ideal for

many high voltage switching applications operating at high

frequencies where low conduction losses are essential. This

device has been optimized for fast switching applications.

Formerly Developmental Type TA49343.

Ordering Information

PART NUMBER

PACKAGE

BRAND

HGTG30N60A4

TO-247

G30N60A4

NOTE: When ordering, use the entire part number.

Features

• 60 A, 600 V @ TC = 110°C

• Low Saturation Voltage : VCE(sat) = 1.8 V @ IC = 30 A

• Typical Fall Time. . . . . . . . . . 58ns at TJ = 125°C

• Low Conduction Loss

Applications

• UPS, Welder

Packaging

JEDEC STYLE TO-247

Symbol

C

G

E

G

CE

TO-247

FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073

4,417,385

4,430,792

4,443,931

4,466,176

4,516,143

4,532,534

4,587,713

4,598,461

4,605,948

4,620,211

4,631,564

4,639,754

4,639,762

4,641,162

4,644,637

4,682,195

4,684,413

4,694,313

4,717,679

4,743,952

4,783,690

4,794,432

4,801,986

4,803,533

4,809,045

4,809,047

4,810,665

4,823,176

4,837,606

4,860,080

4,883,767

4,888,627

4,890,143

4,901,127

4,904,609

4,933,740

4,963,951

4,969,027

©2005 Fairchild Semiconductor Corporation

1

HGTG30N60A4 Rev. C1

www.fairchildsemi.com

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