D200 Просмотр технического описания (PDF) - SavantIC Semiconductor
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D200 Datasheet PDF : 3 Pages
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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD200
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA; IC=0
VCEsat Collector-emitter saturation voltage IC=2A; IB=0.6A
VBEsat
Base-emitter saturation voltage
IC=2A; IB=0.6A
ICBO
Collector cut-off current
VCB=500V;IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=0.5A ; VCE=5V
hFE-2
DC current gain
IC=2A ; VCE=5V
MIN TYP. MAX UNIT
600
V
6
V
8.0
V
1.5
V
10
µA
100 µA
8
2.5
2
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