BSS138 Просмотр технического описания (PDF) - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.
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BSS138 Datasheet PDF : 4 Pages
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Plastic-Encapsulate Mosfets
BSS138 Typical Characteristics
10
ID = 220mA
8
6
VDS = 8V
25V
30V
4
2
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
10
1
RDS(ON) LIMIT
0.1
0.01
VGS = 10V
SINGLE PULSE
RθJA = 350oC/W
TA = 25oC
100µs
1ms
10ms
100ms
1s
DC
0.001
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
100
f = 1 MHz
VGS = 0 V
80
60
CISS
40
COSS
20
CRSS
0
0
10
20
30
40
50
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
5
4
3
2
1
0
0.001
0.01
SINGLE PULSE
RθJA = 350°C/W
TA = 25°C
0.1
1
10
t1, TIME (sec)
100
1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA(t) = r(t) * RθJA
RθJA = 350oC/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.001
0.0001
0.001
0.01
0.1
1
t1, TIME (sec)
10
100
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1a.
Transient thermal response will change depending on the circuit board design.
1000
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
Page:P4 -P4
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