BSS138 Просмотр технического описания (PDF) - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.
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BSS138 Datasheet PDF : 4 Pages
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Plastic-Encapsulate Mosfets
BSS138 Typical Characteristics
1
VGS = 10V 6.0V 4.5V
3.5V
0.8
3.0V
0.6
2.5V
0.4
0.2
2.0V
0
0
0.5
1
1.5
2
2.5
3
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
2
1.8
ID = 220mA
VGS = 10V
1.6
1.4
1.2
1
0.8
0.6
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with
Temperature.
0.6
VDS = 10V
0.5
0.4
TA = -55oC
25oC
125oC
0.3
0.2
0.1
0
0.5
1
1.5
2
2.5
3
3.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
3.4
3
VGS = 2.5V
2.6
2.2
3.0V
1.8
3.5V
4.0V
1.4
4.5V
6.0V
1
10V
0.6
0
0.2
0.4
0.6
0.8
1
ID, DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
4.1
ID = 110mA
3.5
2.9
TA = 125oC
2.3
1.7
TA = 25oC
1.1
0.5
0
2
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
1
VGS = 0V
0.1
0.01
TA = 125oC
0.001
25oC
-55oC
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
Page:P4 -P3
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