BSS138 Просмотр технического описания (PDF) - Jiangsu Changjiang Electronics Technology Co., Ltd
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BSS138 Datasheet PDF : 5 Pages
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MOSFET ELECTRICAL CHARACTERISTICS
Ta=25 ℃ unless otherwise specified
Parameter
Symbol
Test Condition
Off characteristics
Drain-source breakdown voltage
V(BR)DSS VGS = 0V, ID =250µA
Gate-body leakage
IGSS VDS =0V, VGS =±20V
Zero gate voltage drain current
VDS =50V, VGS =0V
IDSS
VDS =30V, VGS =0V
On characteristics
Gate-threshold voltage (note 1)
VGS(th) VDS =VGS, ID =1mA
Static drain-source on-resistance (note 1)
RDS(on)
VGS =10V, ID =0.22A
VGS =4.5V, ID =0.22A
Forward transconductance (note 1)
gFS
VDS =10V, ID =0.22A
Dynamic characteristics (note 2)
Input capacitance
Output capacitance
Ciss
Coss
VDS =25V,VGS =0V, f=1MHz
Reverse transfer capacitance
Crss
Switching characteristics
Turn-on delay time (note 1,2)
td(on)
Rise time (note 1,2)
Turn-off delay time (note 1,2)
tr
td(off)
VDD=30V, VDS=10V,
ID =0.29A,RGEN=6Ω
Fall time (note 1,2)
tf
Drain-source body diode characteristics
Body diode forward voltage (note 1)
VSD IS=0.44A, VGS = 0V
Notes:
1. Pulse Test ; Pulse Width ≤300µs, Duty Cycle ≤2%.
2. These parameters have no way to verify.
Min Typ Max Units
50
V
±100 nA
0.5
µA
100 nA
0.80
1.50
V
3.50
Ω
6
0.12
S
27
13
pF
6
5
18
ns
36
14
1.4
V
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2
E,May,2015
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