BSS138 Просмотр технического описания (PDF) - Jiangsu Changjiang Electronics Technology Co., Ltd
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BSS138 Datasheet PDF : 5 Pages
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFETS
BSS138
V(BR)DSS
50 V
N-Channel 50-V(D-S) MOSFET
RDS(on)MAX
3.5Ω@10V
6Ω@4.5V
ID
220mA
SOT-23
1. GATE
2. SOURCE
3. DRAIN
FEATURE
z High density cell design for extremely low RDS(on)
z Rugged and Relaible
APPLICATION
z Direct Logic-Level Interface: TTL/CMOS
z Drivers: Relays, Solenoids, Lamps, Hammers,Display,
Memories, Transistors, etc.
z Battery Operated Systems
z Solid-State Relays
MARKING
Equivalent Circuit
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Continuous Gate-Source Voltage
Continuous Drain Current
Power Dissipation
Thermal Resistance from Junction to Ambient
Operating Temperature
Storage Temperature
Symbol
VDS
VGSS
ID
PD
RθJA
Tj
Tstg
Value
50
±20
0.22
0.35
357
150
-55 ~+150
Unit
V
A
W
℃/W
℃
www.cj-elec.com
1
D,Apr,2015
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