TIP160 Просмотр технического описания (PDF) - Inchange Semiconductor
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TIP160 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
TIP160/161/162
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter
breakdown voltage
TIP160
TIP161 IC=10mA, IB=0
TIP162
VCEsat-1 Collector-emitter saturation voltage IC=6.5A ,IB=0.1A
VCEsat-2 Collector-emitter saturation voltage IC=10A ,IB=1A
VBEsat Base-emitter saturation voltage
IC=6.5A ,IB=0.1A
VF
Diode forward voltage
IF=10A
ICEO
Collector
cut-off current
TIP160 VCE=320V, IB=0
TIP161 VCE=350V, IB=0
TIP162 VCE=380V, IB=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE
DC current gain
IC=4A ; VCE=2.2V
Switching times
td
Delay time
tr
Rise time
ts
Storage time
VCC =33 V, IC = 6.5 A,
IB1 =-IB2 =100 mA
tp=20μs ;Duty Cycle≤2.0%
tf
Fall time
MIN TYP. MAX UNIT
320
350
V
380
2.8
V
2.9
V
2.2
V
3.5
V
1.0
mA
100 mA
200
0.3
μs
1.5
μs
2.3
μs
2.8
μs
2
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