CQY80NG Просмотр технического описания (PDF) - Vishay Semiconductors

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производитель

CQY80NG

Optocoupler with Phototransistor Output

Vishay Semiconductors 

CQY80N(G)

Vishay Semiconductors

Features

Approvals:

D BSI: BS EN 41003, BS EN 60095 (BS 415),

BS EN 60950 (BS 7002),

Certificate number 7081 and 7402

D FIMKO (SETI): EN 60950,

Certificate number 12399

D Underwriters Laboratory (UL) 1577 recognized,

file number E-76222

D VDE 0884, Certificate number 94778

VDE 0884 related features:

D Rated impulse voltage (transient overvoltage)

VIOTM = 6 kV peak

D Isolation test voltage

(partial discharge test voltage) Vpd = 1.6 kV

D Rated isolation voltage (RMS includes DC)

VIOWM = 600 VRMS (848 V peak)

D Rated recurring peak voltage (repetitive)

VIORM = 600 VRMS

D Creepage current resistance according to

VDE 0303/IEC 112

Comparative Tracking Index: CTI = 275

D Thickness through insulation ≥ 0.75 mm

General features:

D Isolation materials according to UL94-VO

D Pollution degree 2

(DIN/VDE 0110 / resp. IEC 664)

D Climatic classification 55/100/21 (IEC 68 part 1)

D Special construction:

Therefore, extra low coupling capacity of

typical 0.3 pF, high Common Mode Rejection

D Low temperature coefficient of CTR

D CTR > 50%

D Coupling System A

Absolute Maximum Ratings

Input (Emitter)

Parameter

Reverse voltage

Forward current

Forward surge current

Power dissipation

Junction temperature

Test Conditions

tp ≤ 10 ms

° Tamb ≤ 25 C

Symbol

Value

Unit

VR

5

V

IF

IFSM

60

mA

1.5

A

PV

Tj

100

mW

125

°C

Output (Detector)

Parameter

Collector emitter voltage

Emitter collector voltage

Collector current

Collector peak current

Power dissipation

Junction temperature

Test Conditions

tp/T = 0.5, tp ≤ 10 ms

° Tamb ≤ 25 C

Symbol

Value

Unit

VCEO

VECO

IC

ICM

PV

Tj

32

V

7

V

50

mA

100

mA

150

mW

125

°C

Coupler

Parameter

Isolation test voltage (RMS)

Total power dissipation

Ambient temperature range

Storage temperature range

Soldering temperature

Test Conditions

t = 1 min

° Tamb ≤ 25 C

2 mm from case, t ≤ 10 s

Symbol

Value

Unit

VIO

Ptot

Tamb

Tstg

Tsd

3.75

kV

250

mW

–55 to +100

°C

–55 to +125

°C

260

°C

2 (10)

Rev. A3, 11–Jan–99

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