BUV48 Просмотр технического описания (PDF) - ON Semiconductor
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BUV48 Datasheet PDF : 8 Pages
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1
D = 0.5
0.5
BUV48 BUV48A
0.2
0.2
0.1
0.1 0.05
0.05 0.02
0.02
0.01
SINGLE PULSE
RθJC(t) = r(t) RθJC
θJC = 1°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) RθJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.01
0.02
0.05 0.1 0.2
0.5 1
2
5
10 20
t, TIME (ms)
50 100 200
500 1000 2000
Figure 15. Thermal Response
OVERLOAD CHARACTERISTICS
100
TC = 25°C
80
60
40
tp = 10 µs
20
BUV48A
BUV48
0
100
200
300
400 450 500
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 16. Rated Overload Safe Operating Area
(OLSOA)
OLSOA
OLSOA applies when maximum collector current is limited
and known. A good example is a circuit where an inductor is
inserted between the transistor and the bus, which limits the
rate of rise of collector current to a known value. If the tran-
sistor is then turned off within a specified amount of time, the
magnitude of collector current is also known.
Maximum allowable collector–emitter voltage versus col-
lector current is plotted for several pulse widths. (Pulse width
is defined as the time lag between the fault condition and the
removal of base drive.) Storage time of the transistor has
been factored into the curve. Therefore, with bus voltage and
maximum collector current known, Figure 16 defines the
maximum time which can be allowed for fault detection and
shutdown of base drive.
OLSOA is measured in a common–base circuit (Figure 18)
which allows precise definition of collector–emitter voltage
and collector current. This is the same circuit that is used to
measure forward–bias safe operating area.
5
4
3
RBE = 100 Ω
RBE = 2.2 Ω
2
RBE = 10 Ω
1
RBE = 0
0
2
4
6
8
10
dV/dt (KV/µs)
Figure 17. IC = f(dV/dt)
500 µF
500 V
VCC
Notes:
• VCE = VCC + VBE
• Adjust pulsed current source
for desired IC, tp
VEE
Figure 18. Overload SOA Test Circuit
Motorola Bipolar Power Transistor Device Data
7
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