MPSA92 Просмотр технического описания (PDF) - Continental Device India Limited
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MPSA92 Datasheet PDF : 4 Pages
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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR EPITAXIAL TRANSISTOR
EBC
High Voltage Transistors
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
Power Dissipation at Ta=25ºC
Derate Above 25ºC
Power Dissipation at Tc=25ºC
Derate Above 25ºC
Operating And Storage Junction
Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
PD
PD
Tj, Tstg
THERMAL CHARACTERISTICS
Junction to Case
Junction to Ambient in free air
Rth (j-c)
Rth (j-a)
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Emitter Voltage
VCEO
IC=1mA, IB=0
Collector Base Voltage
VCBO
IC=100µA, IE=0
Emitter Base Voltage
VEBO
IE=100µA, IC=0
Collector Cut Off Current
ICBO
VCB=200V, IE=0,
Emitter Cut Off Current
IEBO
VEB=3V, IC=0,
DC Current Gain
*hFE
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=30mA
Collector Emitter Saturation Voltage *VCE (sat)
IC=20mA, IB=2mA
Base Emitter Saturation Voltage
*VBE (sat)
IC=20mA, IB=2mA
DYNAMIC CHARACTERISTICS
DESCRIPTION
Current Gain Bandwidth Product
Collector Base Capacitance
SYMBOL
TEST CONDITION
fT
IC=10mA, VCE=20V, f=100MHz
Ccb
VCB=20V, IE=0, f=1MHz
*PulseTest: Pulse Width <300µs, Duty Cycle<2%
MPSA92Rev_1 071105E
MPSA92
TO-92
Plastic Package
For Lead Free Parts, Device
Part # will be Prefixed with
"T"
VALUE
300
300
5.0
500
625
5.0
1.5
12
- 55 to +150
UNITS
V
V
V
mA
mW
mW/ºC
W
mW/ºC
ºC
83.3
200
MIN
MAX
300
300
5.0
250
100
25
40
25
0.5
0.9
ºC/W
ºC/W
UNITS
V
V
V
nA
nA
V
V
MIN
MAX
UNITS
50
MHz
6.0
pF
Continental Device India Limited
Data Sheet
Page 1 of 4
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