BFN19(2001) Просмотр технического описания (PDF) - Infineon Technologies
Номер в каталоге
Компоненты Описание
производитель
BFN19 Datasheet PDF : 5 Pages
| |||
PNP Silicon High-Voltage Transistors
Suitable for video output stages in TV sets and
switching power supplies
High breakdown voltage
Low collector-emitter saturation voltage
Complementary types: BFN16, BFN18 (NPN)
BFN17, BFN19
1
2
3
2
VPS05162
Type
BFN17
BFN19
Marking
DG
DH
1=B
1=B
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current
Peak base current
Total power dissipation, TS = 130 °C
Junction temperature
Storage temperature
Thermal Resistance
Junction - soldering point1)
Pin Configuration
2=C
3=E
2=C
3=E
Package
SOT89
SOT89
Symbol
VCEO
VCBO
VEBO
IC
ICM
IB
IBM
Ptot
Tj
Tstg
BFN17 BFN19 Unit
250
300 V
250
300
5
5
200
mA
500
100
200
1
W
150
°C
-65 ... 150
RthJS
20
K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
1
Nov-30-2001
Share Link: 