BF720T1 Просмотр технического описания (PDF) - ON Semiconductor

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BF720T1

NPN SILICON TRANSISTOR SURFACE MOUNT

ON Semiconductor 

ON Semiconductort

NPN Silicon Transistor

MAXIMUM RATINGS

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Total Power Dissipation up to TA = 25°C

Storage Temperature Range

Junction Temperature

DEVICE MARKING

DC

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance

from Junction-to-Ambient(1)

Symbol

VCEO

VCBO

VCER

VEBO

IC

PD

Tstg

TJ

Value

300

300

300

5.0

100

1.5

–65 to +150

150

Unit

Vdc

Vdc

Vdc

Vdc

mAdc

Watts

°C

°C

Symbol

Max

RθJA

83.3

Unit

°C/W

BF720T1

ON Semiconductor Preferred Device

NPN SILICON

TRANSISTOR

SURFACE MOUNT

4

1

2

3

CASE 318E-04, STYLE 1

SOT–223 (TO-261AA)

COLLECTOR 2,4

BASE

1

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

EMITTER 3

Characteristics

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

(IC = 1.0 mAdc, IB = 0)

V(BR)CEO

300

—

Vdc

Collector-Base Breakdown Voltage

(IC = 100 µAdc, IE = 0)

V(BR)CBO

300

—

Vdc

Collector-Emitter Breakdown Voltage

(IC = 100 µAdc, RBE = 2.7 kΩ)

V(BR)CER

300

—

Vdc

Emitter-Base Breakdown Voltage

(IE = 10 µAdc, IC = 0)

V(BR)EBO

5.0

—

Vdc

Collector-Base Cutoff Current

(VCB = 200 Vdc, IE = 0)

ICBO

—

10

nAdc

Collector–Emitter Cutoff Current

(VCE = 250 Vdc, RBE = 2.7 kΩ)

(VCE = 200 Vdc, RBE = 2.7 kΩ, TJ = 150°C)

ICER

—

50

nAdc

—

10

µAdc

1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 in2.

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

© Semiconductor Components Industries, LLC, 2001

1

November, 2001 – Rev. 5

Publication Order Number:

BF720T1/D

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