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BUK472-60B

PowerMOS transistor Isolated version of BUK452-60A/B

Philips Electronics 

Philips Semiconductors

PowerMOS transistor

Isolated version of BUK452-60A/B

Product specification

BUK472-60A/B

GENERAL DESCRIPTION

N-channel enhancement mode

field-effect power transistor in a

plastic full-pack envelope.

The device is intended for use in

Switched Mode Power Supplies

(SMPS), motor control, welding,

DC/DC and AC/DC converters, and

in automotive and general purpose

switching applications.

QUICK REFERENCE DATA

SYMBOL PARAMETER

VDS

ID

Ptot

Tj

RDS(ON)

BUK472

Drain-source voltage

Drain current (DC)

Total power dissipation

Junction temperature

Drain-source on-state

resistance

MAX.

-60A

60

10

22

150

0.13

MAX.

-60B

60

9.2

22

150

0.15

UNIT

V

A

W

˚C

Ω

PINNING - SOT186A

PIN

DESCRIPTION

1 gate

2 drain

3 source

case isolated

PIN CONFIGURATION

case

12 3

SYMBOL

d

g

s

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

MIN.

VDS

VDGR

±VGS

Drain-source voltage

Drain-gate voltage

Gate-source voltage

-

-

RGS = 20 kΩ

-

-

-

ID

Drain current (DC)

Ths = 25 ˚C

-

ID

Drain current (DC)

Ths = 100 ˚C

-

IDM

Drain current (pulse peak value) Ths = 25 ˚C

-

Ptot

Total power dissipation

Tstg

Storage temperature

Tj

Junction temperature

Ths = 25 ˚C

-

-

- 55

-

-

THERMAL RESISTANCES

SYMBOL

Rth j-hs

Rth j-a

PARAMETER

Thermal resistance junction to

heatsink

Thermal resistance junction to

ambient

CONDITIONS

with heatsink compound

MAX.

60

60

30

-60A

10

6.3

40

-60B

9.2

5.8

37

22

150

150

UNIT

V

V

V

A

A

A

W

˚C

˚C

MIN. TYP. MAX. UNIT

-

- 5.68 K/W

-

55

- K/W

November 1996

1

Rev 1.200

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