MBR10100CT Просмотр технического описания (PDF) - Inchange Semiconductor

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производитель

MBR10100CT

Schottky Barrier Rectifier

Inchange Semiconductor 

INCHANGE Semiconductor

Schottky Barrier Rectifier

Product Specification

MBR10100CT

FEATURES

·Low Forward Voltage

·150℃ Operating Junction Temperature

·Guaranteed Reverse Avalanche

·Low Power Loss/High Efficiency

·High Surge Capacity

·Low Stored Charge Majority Carrier Conduction

MECHANICAL CHARACTERISTICS

·Case: Epoxy, Molded

·Finish: All External Surfaces Corrosion Resistant and

Terminal Leads are Readily Solderable

·Lead Temperature for Soldering Purposes: 260℃ Max.

for 10 Seconds

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VRRM

VRWM

VR

IF(AV)

IFSM

Peak Repetitive Reverse Voltage

RMS Voltage

DC Blocking Voltage

Average Rectified Forward Current

(Rated VR) TC= 133℃

Nonrepetitive Peak Surge Current

(Surge applied at rated load conditions

half-wave, single phase, 60Hz)

TJ

Junction Temperature

VALUE UNIT

100

70

V

100

10

A

150

A

-55~150 ℃

Tstg

Storage Temperature Range

-55~175 ℃

dv/dt Voltage Rate of Change (Rated VR)

10,000 V/μs

isc website：www.iscsemi.cn

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