2N6284 Просмотр технического описания (PDF) - Microsemi Corporation

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производитель

2N6284

NPN DARLINGTON POWER SILICON TRANSISTOR

Microsemi Corporation 

2N6283, 2N6284 JAN SERIES

ELECTRICAL CHARACTERISTICS (con’t)

Characteristics

ON CHARACTERISTICS (2)

Forward-Current Transfer Ratio

IC = 1.0 Adc, VCE = 3.0 Vdc

IC = 10 Adc, VCE = 3.0 Vdc

IC = 20 Adc, VCE = 3.0 Vdc

Collector-Emitter Saturation Voltage

IC = 20 Adc, IB = 200 mAdc

IC = 10 Adc, IB = 40 mAdc

Base-Emitter Saturation Voltage

IC = 20 Adc, IB = 200 mAdc

Base-Emitter Voltage

IC = 10 Adc, VCE = 3.0Vdc

DYNAMIC CHARACTERISTICS

Magnitude of Common Emitter Small-Signal Short-Circuit

Forward Current Transfer Ratio

IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 MHz

Small-Signal Short-Circuit Forward Current Transfer Ratio

IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 kHz

Output Capacitance

VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz

SWITCHING CHARACTERISTICS

Turn-On Time

VCC = 30 Vdc; IC = 10 Adc; IB = 40 mAdc

Turn-Off Time

VCC = 30 Vdc; IC = 10 Adc; IB1 = IB2 = 40 mAdc

SAFE OPERATING AREA

DC Tests

TC = +250C, 1 Cycle, t = 1.0 s

Test 1

VCE = 8.75 Vdc, IC = 20 Adc

Test 2

VCE = 30 Vdc, IC = 5.8 Adc

Test 3

VCE = 80 Vdc, IC = 100 mAdc

2N6283

VCE = 100 Vdc, IC = 100 mAdc

2N6284

(2) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.

Symbol

hFE

VCE(sat)

VBE(sat)

VBE

hfe

hfe

Cobo

ton

toff

Min. Max. Unit

1,500

1,250

500

18,000

3.0

Vdc

2.0

4.0

Vdc

2.8

Vdc

8.0

80

700

300

pF

2.0

µs

10

µs

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

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