MMBTA42 Просмотр технического описания (PDF) - Philips Electronics
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MMBTA42 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN high-voltage transistor
Product specification
MMBTA42
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
VALUE
500
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
IEBO
emitter cut-off current
hFE
DC current gain
VCEsat
VBEsat
Cre
fT
collector-emitter saturation voltage
base-emitter saturation voltage
feedback capacitance
transition frequency
CONDITIONS
IE = 0; VCB = 200 V
IC = 0; VEB = 6 V
VCE = 10 V
IC = 1 mA
IC = 10 mA
IC = 30 mA
IC = 20 mA; IB = 2 mA
IC = 20 mA; IB = 2 mA
IC = ic = 0; VCB = 20 V;
f = 1 MHz
IC = 10 mA; VCE = 20 V;
f = 100 MHz
MIN.
−
−
25
40
40
−
−
−
50
MAX.
100
100
UNIT
nA
nA
−
−
−
500
mV
900
mV
3
pF
−
MHz
2000 Apr 11
3
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