MMBTA42 Просмотр технического описания (PDF) - Philips Electronics
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MMBTA42 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN high-voltage transistor
Product specification
MMBTA42
FEATURES
• Low current (max. 100 mA)
• High voltage (max. 300 V).
APPLICATIONS
• Telephony
• Professional communication equipment.
PINNING
PIN
1
2
3
DESCRIPTION
base
emitter
collector
DESCRIPTION
NPN high-voltage transistor in a SOT23 plastic package.
PNP complement: MMBTA92.
MARKING
TYPE NUMBER
MMBTA42
MARKING CODE(1)
7D∗
Note
1. ∗ = p: made in Hong Kong.
∗ = t: made in Malaysia.
handbook, halfpage
3
3
1
1
Top view
2
2
MAM255
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
−
−
−
−
−
−
−
−65
−
−65
MAX.
300
300
6
100
200
100
250
+150
150
+150
UNIT
V
V
V
mA
mA
mA
mW
°C
°C
°C
2000 Apr 11
2
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