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BAV199 Просмотр технического описания (PDF) - Philips Electronics
Номер в каталоге
Компоненты Описание
производитель
BAV199
Low-leakage double diode
Philips Electronics
BAV199 Datasheet PDF : 8 Pages
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Philips Semiconductors
Low-leakage double diode
Product specification
BAV199
handboo
1
k,
0
h
2
alfpage
IR
(nA)
10
(1)
MLB754
1
10
1
10
2
(2)
10
3
0
50
V
R
= 75 V.
(1) Maximum values.
(2) Typical values.
100
150
T j (
o
C)
200
Fig.5 Reverse current as a function of junction
temperature; per diode.
2
handbook, halfpage
Cd
(pF)
1
MBG526
0
0
5
10
15
VR (V)
20
f = 1 MHz; T
j
= 25
°
C.
Fig.6 Diode capacitance as a function of reverse
voltage; per diode; typical values.
handbook, full pagewidth
RS = 50
Ω
V = VR IF x R
S
D.U.T.
IF
SAMPLING
OSCILLOSCOPE
R
i
= 50
Ω
VR
MGA881
tr
tp
10%
90%
input signal
t
IF
t
rr
t
(1)
output signal
1999 May 11
Fig.7 Reverse recovery time test circuit and waveforms.
5
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