RGP10M Просмотр технического описания (PDF) - SUNMATE electronic Co., LTD

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Компоненты Описание

производитель

RGP10M

FAST RECOVERY RECTIFIER DIODES

SUNMATE electronic Co., LTD 

RATING AND CHARACTERISTIC CURVES ( RGP10A - RGP10M )

FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM

50 Ω

10 Ω

Trr

+ 0.5

+

50 Vdc

(approx.)

D.U.T.

PULSE

GENERATOR

( NOTE 2 )

0

- 0.25

1Ω

OSCILLOSCOPE

( NOTE 1 )

- 1.0 A

NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF.

2. Rise time = 10 ns max., Source Impedance = 50 ohms.

3. All Resistors = Non-inductive Types.

SET TIME BASE FOR 50/100 ns/cm

1

FIG.2 - DERATING CURVE FOR OUTPUT

RECTIFIED CURRENT

1.0

0.8

0.6

TJ = 25 °C

0.4

0.2

60Hz RESISTIVE OR INDUCTIVE LOAD

0.375" (9.5mm) LEAD LENGTHS

0

0

25

50

75

100 125 150 175

AMBIENT TEMPERATURE, ( °C)

FIG.3 - MAXIMUM NON-REPETITIVE PEAK

FORWARD SURGE CURRENT

30

24

18

12

8.3 ms SINGLE HALF SINE-WAVE

(JEDEC) METHOD

6

TJ = TJ max.

0

1

2

4 6 10 20 40 60 100

NUMBER OF CYCLES AT 60Hz

FIG.4 - TYPICAL FORWARD CHARACTERISTICS

10

Pulse W idth = 300 µs

2% Duty Cycle

TJ = 25 °C

1.0

0.1

0.01

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

FORWARD VOLTAGE, VOLTS

2 of 2

FIG.5 - TYPICAL REVERSE CHARACTERISTICS

10

TJ = 100 °C

1.0

0.1

TJ = 25 °C

0.01

0

20 40

60 80 100 120 140

PERCENT OF RATED REVERSE

VOLTAGE, (%)

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