BF545C Просмотр технического описания (PDF) - Philips Electronics

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производитель

BF545C

N-channel silicon junction field-effect transistors

Philips Electronics 

Philips Semiconductors

N-channel silicon junction

field-effect transistors

Product specification

BF545A; BF545B; BF545C

−103

handbook, halfpage

IGSS

(pA)

−102

MBB453

−10

−1

−10−1

−50

0

50

100

150

Tj (°C)

VDS = 0; VGS = −20 V.

Fig.17 Gate current as a function of junction

temperature; typical values.

1

handbook, halfpage

Crs

(pF)

0.5

MBB452

0

−10

−5

VGS (V)

0

VDS = 15 V; Tj = 25 °C.

Fig.18 Reverse transfer capacitance as a function

of gate-source voltage; typical values.

handbook, h3alfpage

Cis

(pF)

2

1

0

−10

MBB451

−5

VGS (V)

0

102

handbook, halfpage

yis

(mS)

10

1

10−1

10−2

10

MBB468

bis

gis

102

f (MHz)

103

VDS = 15 V; Tj = 25 °C.

Fig.19 Typical input capacitance.

1996 Jul 29

VDS = 10 V; ID = 1 mA; Tamb = 25 °C.

Fig.20 Common-source input admittance;

typical values.

9

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