BFG198 Просмотр технического описания (PDF) - Philips Electronics
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BFG198 Datasheet PDF : 12 Pages
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Philips Semiconductors
NPN 8 GHz wideband transistor
Product specification
BFG198
handbook, full pagewidth
25
10
50
2 GHz
100
250
+j
0
10
25
50
100
250
∞
–j
40 MHz
10
250
25
100
50
IC = 50 mA; VCE = 8 V; Tamb = 25 °C; Zo = 50 Ω.
MBB494
Fig.13 Common emitter input reflection coefficient (S11).
handbook, full pagewidth
90o
120 o
150 o
40 MHz
180o 100 80
60 40
20
2 GHz
60o
30o
ϕ
0o
ϕ
150 o
30o
IC = 50 mA; VCE = 8 V; Tamb = 25 °C.
120 o
60o
90o
MBB496
Fig.14 Common emitter forward transmission coefficient (S21).
1995 Sep 12
9
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