BFG198 Просмотр технического описания (PDF) - Philips Electronics
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BFG198 Datasheet PDF : 12 Pages
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Philips Semiconductors
NPN 8 GHz wideband transistor
handbook,3h5alfpage
d2
(dB)
40
MBB268
45
50
55
60
20
40
60
80
100
120
I C (mA)
VCE = 8 V; Vo = 50 dBmV; Tamb = 25 °C
f(p+q) = 810 MHz.
Fig.12 Second order intermodulation distortion as
a function of collector current.
Product specification
BFG198
1995 Sep 12
8
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