BFG198 Просмотр технического описания (PDF) - Philips Electronics
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BFG198 Datasheet PDF : 12 Pages
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Philips Semiconductors
NPN 8 GHz wideband transistor
Product specification
BFG198
handbook,4h0alfpage
G UM
(dB)
30
20
10
0
10
102
MBB753
103 f (MHz) 104
IC = 50 mA; VCE = 8 V; Tamb = 25 °C;
Fig.8 Maximum gain as a function of frequency.
45
handbook, halfpage
d im
(dB)
50
MBB498
55
60
65
70
20
40
60
80
100
120
I C (mA)
VCE = 8 V; Vo = 750 mV; Tamb = 25 °C;
f(p+q−r) = 443.25 MHz.
Fig.9 Intermodulation distortion as a function of
collector current.
handbook,4h5alfpage
d im
(dB)
50
MBB266
handbook,3h5alfpage
d2
(dB)
40
MBB497
55
45
60
50
65
70
20
40
60
80
100
120
I C (mA)
VCE = 8 V; Vo = 700 mV; Tamb = 25 °C;
f(p+q) = 793.25 MHz.
Fig.10 Intermodulation distortion as a function of
collector current.
55
60
20
40
60
80
100
120
I C (mA)
VCE = 8 V; Vo = 50 dBmV; Tamb = 25 °C
f(p+q) = 450 MHz.
Fig.11 Second order intermodulation distortion as
a function of collector current.
1995 Sep 12
7
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