BFG198 Просмотр технического описания (PDF) - Philips Electronics
Номер в каталоге
Компоненты Описание
производитель
BFG198 Datasheet PDF : 12 Pages
| |||
Philips Semiconductors
NPN 8 GHz wideband transistor
Product specification
BFG198
hanPdtbootok1, .h2alfpage
(W)
1.0
0.8
0.6
0.4
0.2
0
0
50
MBB752
100
150
Ts
(
o
200
C)
Fig.4 Power derating curve.
handboo1k,6h0alfpage
h FE
120
MBB267
80
40
0
40
80
120
I C (mA)
VCE = 5 V; Tj = 25 °C.
Fig.5 DC current gain as a function of collector
current.
handbook1, .h2alfpage
C re
(pF)
0.8
MBB751
0.4
0
0
4
8
12
16
20
VCB (V)
10
handbofoTk, halfpage
(GHz)
8
6
4
2
0
0
40
MBB499
80 IC (mA) 120
IE = 0; f = 1 MHz; Tj = 25 °C.
Fig.6 Feedback capacitance as a function of
collector-base voltage.
1995 Sep 12
VCE = 8 V; f = 1 GHz; Tamb = 25 °C.
Fig.7 Transition frequency as a function of
collector current.
6
Share Link: 