BFG198 Просмотр технического описания (PDF) - Philips Electronics
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BFG198 Datasheet PDF : 12 Pages
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Philips Semiconductors
NPN 8 GHz wideband transistor
Product specification
BFG198
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-s
thermal resistance from junction to soldering point up to Ts = 135 °C (note 1)
Note
1. Ts is the temperature at the soldering point of the collector tab.
VALUE UNIT
40
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
hFE
DC current gain
Cc
collector capacitance
Ce
emitter capacitance
Cre
feedback capacitance
fT
transition frequency
GUM
maximum unilateral power
gain; note 1
Vo
output voltage
d2
second order
intermodulation distortion
CONDITIONS
IE = 0; VCB = 5 V
IC = 50 mA; VCE = 5 V
IE = ie = 0; VCB = 8 V; f = 1 MHz
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
IC = 0; VCE = 8 V; f = 1 MHz
IC = 50 mA; VCE = 8 V; f = 1 GHz;
Tamb = 25 °C
IC = 50 mA; VCE = 8 V; f = 500 MHz;
Tamb = 25 °C
IC = 50 mA; VCE = 8 V; f = 800 MHz;
Tamb = 25 °C
note 2
note 3
note 4
MIN.
−
40
−
−
−
−
−
−
−
−
−
TYP.
−
90
1.5
4
0.8
8
18
15
750
700
−55
MAX.
100
−
−
−
−
−
−
−
−
−
−
UNIT
nA
pF
pF
pF
GHz
dB
dB
mV
mV
dB
Note
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
GUM
=
10
log --(--1-----–------s---1---1----2s---)-2--1-(---1-2----–------s---2--2-----2---)-
dB.
2. dim = −60 dB (DIN 45004B); IC = 70 mA; VCE = 8 V; RL = 75 Ω; Tamb = 25 °C;
Vp = Vo at dim = −60 dB;
Vq = Vo −6 dB; fp = 445.25 MHz;
Vr = Vo −6 dB; fq = 453.25 MHz; fr = 455.25 MHz
measured at f(p+q−r) = 443.25 MHz.
3. dim = −60 dB (DIN 45004B); IC = 70 mA; VCE = 8 V; RL = 75 Ω; Tamb = 25 °C;
Vp = Vo at dim = −60 dB; fp = 795.25 MHz;
Vq = Vo −6 dB; fq = 803.25 MHz;
Vr = Vo −6 dB; fr = 805.25 MHz;
measured at f(p+q−r) = 793.25 MHz.
4. IC = 50 mA; VCE = 8 V; Vo = 50 dBmV;
f(p+q) = 810 MHz; fp = 250 MHz; fq = 560 MHz.
1995 Sep 12
3
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