BFG198 Просмотр технического описания (PDF) - Philips Electronics
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BFG198 Datasheet PDF : 12 Pages
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Philips Semiconductors
NPN 8 GHz wideband transistor
DESCRIPTION
PINNING
NPN planar epitaxial transistor in a
PIN
DESCRIPTION
plastic SOT223 envelope, intended
for wideband amplifier applications.
1
emitter
age
The device features a high gain and
2
base
excellent output voltage capabilities. 3
emitter
4
collector
Product specification
BFG198
4
1
2
3
Top view
MSB002 - 1
Fig.1 SOT223.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
IC
Ptot
hFE
fT
GUM
Vo
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
transition frequency
maximum unilateral power
gain
output voltage
open emitter
open base
up to Ts = 135 °C (note 1)
IC = 50 mA; VCE = 5 V; Tj = 25 °C
IC = 50 mA; VCE = 8 V; f = 1 GHz;
Tamb = 25 °C
IC = 50 mA; VCE = 8 V; f = 500 MHz;
Tamb = 25 °C
IC = 50 mA; VCE = 8 V; f = 800 MHz;
Tamb = 25 °C
dim = −60 dB; IC = 70 mA; VCE = 8 V;
RL = 75 Ω; Tamb = 25 °C;
f(p+q−r) = 793.25 MHz
MIN.
−
−
−
−
40
−
TYP.
−
−
−
−
90
8
MAX.
20
10
100
1
−
−
UNIT
V
V
mA
W
GHz
−
18
−
dB
−
15
−
dB
−
700 −
mV
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
Ptot
Tstg
Tj
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
open emitter
open base
open collector
CONDITIONS
up to Ts = 135 °C (note 1)
Note
1. Ts is the temperature at the soldering point of the collector tab.
1995 Sep 12
2
MIN.
−
−
−
−
−
−65
−
MAX.
20
10
2.5
100
1
+150
175
UNIT
V
V
V
mA
W
°C
°C
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