BFG198 Просмотр технического описания (PDF) - Philips Electronics
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BFG198 Datasheet PDF : 12 Pages
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Philips Semiconductors
NPN 8 GHz wideband transistor
Product specification
BFG198
handbook, full pagewidth
120 o
150 o
90o
2 GHz
60o
30o
180o 0.2 0.16 0.12 0.08 0.04
40 MHz
ϕ
0o
ϕ
150 o
30o
IC = 50 mA; VCE = 8 V; Tamb = 25 °C.
120 o
60o
90o
MBB495
Fig.15 Common emitter reverse transmission coefficient (S12).
handbook, full pagewidth
50
25
100
10
250
2 GHz
+j
0
10
25
50
100
250
∞
–j
10
40 MHz
250
25
100
50
IC = 50 mA; VCE = 8 V; Tamb = 25 °C; Zo = 50 Ω.
MBB493
Fig.16 Common emitter output reflection coefficient (S22).
1995 Sep 12
10
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