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Компоненты Описание
HZS33NB1 Просмотр технического описания (PDF) - Renesas Electronics
Номер в каталоге
Компоненты Описание
производитель
HZS33NB1
Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply
Renesas Electronics
HZS33NB1 Datasheet PDF : 7 Pages
1
2
3
4
5
6
7
HZS-N Series
Absolute Maximum Ratings
Item
Power dissipation
Junction temperature
Storage temperature
Symbol
Pd
Tj
Tstg
Value
400
200
−
55 to +175
(Ta = 25°C)
Unit
mW
°C
°C
Electrical Characteristics
Zener Voltage
Type
Grade
V
Z
(V)*
1
Min
Max
HZS2.0N B1
1.88
2.10
B2
2.02
2.20
HZS2.2N B1
2.12
2.30
B2
2.22
2.41
HZS2.4N B1
2.33
2.52
B2
2.43
2.63
HZS2.7N B1
2.54
2.75
B2
2.69
2.91
HZS3.0N B1
2.85
3.07
B2
3.01
3.22
HZS3.3N B1
3.16
3.38
B2
3.32
3.53
HZS3.6N B1
3.47
3.68
B2
3.62
3.83
HZS3.9N B1
3.77
3.98
B2
3.92
4.14
HZS4.3N B1
4.05
42.6
B2
4.20
4.40
B3
4.34
4.53
HZS4.7N B1
4.47
4.65
B2
4.59
4.77
B3
4.71
4.91
HZS5.1N B1
4.85
5.03
B2
4.97
5.18
B3
5.12
5.35
HZS5.6N B1
5.29
5.52
B2
5.46
5.70
B3
5.64
5.88
HZS6.2N B1
5.81
6.06
B2
5.99
6.24
B3
6.16
6.40
HZS6.8N B1
6.32
6.59
B2
6.52
6.79
B3
6.70
6.97
Note: 1. Tested with pulse (P
W
= 40 ms)
Rev.1.00, Mar.11.2004, page 2 of 6
Test
Condition
I
Z
(mA)
5
Reverse Current
I
R
(
µ
A)
Test
Condition
Max
V
R
(V)
120
0.5
(Ta = 25°C)
Dynamic Resistance
r
d
(
Ω
)
Test
Condition
Max
I
Z
(mA)
100
5
5
120
0.7
100
5
5
120
1.0
100
5
5
100
1.0
110
5
5
50
1.0
120
5
5
20
1.0
120
5
5
10
1.0
120
5
5
5
1.0
120
5
5
5
1.0
120
5
5
5
1.0
100
5
5
5
1.5
70
5
5
5
2.5
40
5
5
5
3.0
30
5
5
2
3.5
25
5
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