MMBZ12VALDG Просмотр технического описания (PDF) - NXP Semiconductors.
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MMBZ12VALDG Datasheet PDF : 15 Pages
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NXP Semiconductors
MMBZxVAL series
Double ESD protection diodes for transient overvoltage suppression
Table 10. Characteristics …continued
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Cd
diode capacitance
f = 1 MHz; VR = 0 V
MMBZ12VAL
MMBZ12VAL/DG
MMBZ15VAL
MMBZ15VAL/DG
MMBZ18VAL
MMBZ18VAL/DG
MMBZ20VAL
MMBZ20VAL/DG
MMBZ27VAL
MMBZ27VAL/DG
MMBZ33VAL
MMBZ33VAL/DG
VCL
clamping voltage
MMBZ12VAL
MMBZ12VAL/DG
IPPM = 2.35 A
MMBZ15VAL
MMBZ15VAL/DG
IPPM = 1.9 A
MMBZ18VAL
MMBZ18VAL/DG
IPPM = 1.6 A
MMBZ20VAL
MMBZ20VAL/DG
IPPM = 1.4 A
MMBZ27VAL
MMBZ27VAL/DG
IPPM = 1 A
MMBZ33VAL
MMBZ33VAL/DG
IPPM = 0.87 A
SZ
temperature coefficient IZ = 1 mA
MMBZ12VAL
MMBZ12VAL/DG
MMBZ15VAL
MMBZ15VAL/DG
MMBZ18VAL
MMBZ18VAL/DG
MMBZ20VAL
MMBZ20VAL/DG
MMBZ27VAL
MMBZ27VAL/DG
MMBZ33VAL
MMBZ33VAL/DG
Min
-
-
-
-
-
-
[1][2]
-
-
-
-
-
-
-
-
-
-
-
-
[1] In accordance with IEC 61643-321(10/1000 µs current waveform).
[2] Measured from pin 1 or 2 to pin 3.
Typ Max Unit
110 140 pF
85
105 pF
70
90
pF
65
80
pF
48
60
pF
45
55
pF
-
17
V
-
21
V
-
25
V
-
28
V
-
40
V
-
46
V
8.2 -
11
-
14
-
15.8 -
23
-
29.8 -
mV/K
mV/K
mV/K
mV/K
mV/K
mV/K
MMBZXVAL_SER_1
Product data sheet
Rev. 01 — 1 September 2008
© NXP B.V. 2008. All rights reserved.
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