PHP110NQ08LT Просмотр технического описания (PDF) - Philips Electronics

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PHP110NQ08LT

N-channel TrenchMOS™ logic level FET

Philips Electronics 

Philips Semiconductors

PHP/PHB110NQ08LT

N-channel TrenchMOS™ logic level FET

75

VGS = 0 V

IS

(A)

50

03ap62

25

175 °C

Tj = 25 °C

10

VGS

(V)

8

ID = 25 A

Tj = 25 °C

6

14 V

4

2

03ap64

VDD = 60 V

0

0

0.3

0.6

0.9

1.2

VSD (V)

0

0

50

100 QG (nC) 150

Tj = 25 °C and 175 °C; VGS = 0 V

Fig 12. Source (diode forward) current as a function of

source-drain (diode forward) voltage; typical

values.

ID = 25 A; VDD = 14 V and 60 V

Fig 13. Gate-source voltage as a function of gate

charge; typical values.

9397 750 12924

Product data

Rev. 01 — 29 March 2004

© Koninklijke Philips Electronics N.V. 2004. All rights reserved.

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