D525Y Просмотр технического описания (PDF) - Inchange Semiconductor

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производитель

D525Y

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

Product Specification

2SD525

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=50mA; IB=0

100

V

V(BR)EBO Emitter-base breakdown votage

IE=10mA; IC=0

5

V

VCEsat Collector-emitter saturation voltage IC=4A;IB=0.4 A

2.0

V

VBE

Base-emitter voltage

ICBO

Collector cut-off current

IC=1A ; VCE=5V

VCB=100V; IE=0

1.5

V

100 μA

IEBO

Emitter cut-off current

VEB=5V; IC=0

1

mA

hFE-1

DC current gain

IC=1A ; VCE=5V

40

240

hFE-2

固IN电C半H导AN体GE SEMICONDUTOR fT

COB

DC current gain

Transition frequency

Output capacitance

‹ hFE-1 classifications

R

O

Y

IC=4A ; VCE=5V

IC=1A ; VCE=5V

IE=0; VCB=10V;f=1MHz

20

12

100

MHz

pF

40-80 70-140 120-240

2

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