D525Y Просмотр технического описания (PDF) - Inchange Semiconductor
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D525Y Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD525
DESCRIPTION
·
·With TO-220C package
·Complement to type 2SB595
·High breakdown voltage :VCEO=100V
·Low collector saturation volage
: VCE(sat)=2.0V(Max)
APPLICATIONS
·Power amplifier applications
·Recommend for 30W high fidelity
audio frequency amplifier output stage
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
固IN电C半H导AN体GE SEMICONDUTOR 3
Emitter
Absolute maximum ratings(Tc=25℃)
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
Open emitter
VALUE
100
UNIT
V
VCEO
Collector-emitter voltage
Open base
100
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
5
A
IE
Emitter current
-5
A
PC
Collector power dissipation TC=25℃
40
W
Tj
Junction temperature
Tstg
Storage temperature
150
℃
-55~150
℃
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