S3C70F2 Просмотр технического описания (PDF) - Samsung

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Компоненты Описание

производитель

S3C70F2

single-chip CMOS microcontroller

Samsung 

S3P70F4 OTP

S3C70F2/C70F4/P70F4

Table 16-7. Input/Output Capacitance

(TA = 25 °C, VDD = 0 V )

Parameter

Symbol

Condition

Min

Typ

Input

Capacitance

CIN

f = 1 MHz; Unmeasured pins

–

–

are returned to VSS

Output

Capacitance

COUT

I/O Capacitance

CIO

Max

Units

15

pF

15

pF

15

pF

Table 16-8. Comparator Electrical Characteristics

(TA = – 40 °C to + 85 °C, VDD = 4.0 V to 5.5V, VSS = 0 V)

Parameter

Symbol

Condition

Min

Typ

Input Voltage Range

–

–

0

–

Reference Voltage

VREF

–

Range

Input Voltage Accuracy

VCIN

–

Input Leakage Current

ICIN, IREF

–

0

–

–

–

–3

–

Max

VDD

VDD

±150

3

Units

V

V

mV

µA

Table 16-9. A.C. Electrical Characteristics

(TA = – 40 °C to + 85 °C, VDD = 2.0 V to 5.5 V)

Parameter

Symbol

Conditions

Min

Typ

Instruction Cycle

Time

tCY

VDD = 2.7 V to 5.5 V

0.67

–

VDD = 2.0 V to 5.5 V

0.95

TCL0 Input

Frequency

fTI

VDD = 2.7 V to 5.5 V

0

–

VDD = 2.0 V to 5.5 V

TCL0 Input High,

Low Width

tTIH, tTIL VDD = 2.7 V to 5.5 V

0.48

–

VDD = 2.0 V to 5.5 V

1.8

SCK Cycle Time

tKCY

VDD = 2.7 V to 5.5 V

External SCK source

800

–

Internal SCK source

670

VDD = 2.0 V to 5.5 V

External SCK source

3200

Internal SCK source

3800

Max

Units

64

µs

1.5

MHz

1

MHz

–

µs

–

ns

16–8

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