IXFR26N50 Просмотр технического описания (PDF) - IXYS CORPORATION
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IXFR26N50 Datasheet PDF : 2 Pages
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IXFR 24N50
IXFR 26N50
Symbol
g
fs
Ciss
Coss
C
rss
td(on)
t
r
td(off)
t
f
Q
g(on)
Qgs
Qgd
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V = 15 V; I = I
DS
DT
Note 1
VGS = 0 V, VDS = 25 V, f = 1 MHz
V = 10 V, V = 0.5 • V , I = I
GS
DS
DSS D T
RG = 1 W (External),
VGS = 10 V, VDS = 0.5 • VDSS, ID = IT
11 21
S
4200
pF
450
pF
135
pF
16 25 ns
33 45 ns
65 80 ns
30 40 ns
135 160 nC
28 40 nC
62 85 nC
0.50 K/W
0.15
K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IS
VGS = 0 V
ISM
Repetitive; pulse width limited by TJM
VSD
IF = IS, VGS = 0 V, Note 1
trr
TJ = 25°C
QRM
I
F
=
I,
s
-di/dt
=
100
A/ms,
VR = 100 V
T
J
=
125°C
TJ = 25°C
T
J
=
125°C
I
RM
T=
J
25°C
TJ = 125°C
26 A
104 A
1.5 V
250 ns
400 ns
1 1.5 mC
2
mC
10
A
15
A
Note: 1. Pulse test, t £ 300 ms, duty cycle d £ 2 %
2. IT test current: IXFR26N50
IT = 13A
IXFR24N50
IT = 12A
3.See IXFH26N50 data sheet for characteristic curves.
ISOPLUS 247 (IXFR) OUTLINE
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection
Dim. Millimeter
Min. Max.
A 4.83 5.21
A1 2.29 2.54
A2 1.91 2.16
b 1.14 1.40
b1 1.91 2.13
b2 2.92 3.12
C 0.61 0.80
D 20.80 21.34
E 15.75 16.13
e
5.45 BSC
L 19.81 20.32
L1 3.81 4.32
Q 5.59 6.20
R 4.32 4.83
S 13.21 13.72
T 15.75 16.26
U 1.65 3.03
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 .244
.170 .190
.520 .540
.620 .640
.065 .080
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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