K3304 Просмотр технического описания (PDF) - NEC => Renesas Technology

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производитель

K3304

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

NEC => Renesas Technology 

PACKAGE DRAWING (Unit : mm)

TO-3P (MP-88)

15.7 MAX.

3.2±0.2

4

1 23

4.7 MAX.

1.5 TYP.

2SK3304

EQUIVALENT CIRCUIT

Drain

Gate

Body

Diode

Source

2.2±0.2

5.45 TYP.

1.0±0.2

0.6±0.1

2.8±0.1

5.45 TYP.

1: Gate

2: Drain

3: Source

4: Fin (Drain)

Remark Strong electric field, when exposed to this device, cause destruction of the gate oxide and ultimately

degrade the device operation. Steps must be taken to stop generation of static electricity as much as

possible, and quickly dissipate it once, when it has occurred.

Data Sheet D13992EJ1V0DS00

7

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