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Номер в каталоге
Компоненты Описание
ST3413A Просмотр технического описания (PDF) - STANSON TECHNOLOGY
Номер в каталоге
Компоненты Описание
производитель
ST3413A
P Channel Enhancement Mode MOSFET -3.5A
STANSON TECHNOLOGY
ST3413A Datasheet PDF : 7 Pages
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ST3413A
P Channel Enhancement Mode MOSFET
-3.5A
ELECTRICAL CHARACTERISTICS
( Ta = 25
℃
Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max Unit
Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain
Current
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
On-State Drain Current
I
D(on)
Drain-source On-Resistance R
DS(on)
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Turn-On Time
Turn-Off Time
g
fs
V
SD
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
tr
t
d(off)
tf
V
GS
=0V,I
D
=-250uA
-20
V
V
DS
=VGS,I
D
=-250uA
-0.35
-0.8 V
V
DS
=0V,V
GS
=
±
8V
V
DS
=-20V,V
GS
=0V
V
DS
=-20V,V
GS
=0V
T
J
=55
℃
V
DS
≦
-5V,V
GS
=-4.5V
V
DS
≦
-5V,V
GS
=-2.5V
V
GS
=-1.8V,I
D
=-1.7A
V
GS
=-2.5V,I
D
=-2.4A
V
GS
=-4.5V,I
D
=-3.4A
V
DS
=-5V,I
D
=-2.8A
±
100 nA
-1
-5
uA
-6
-3
A
0.125
0.080
Ω
0.070
6
S
I
S
=-1.5A,V
GS
=0V
-0.8 -1.2 V
V
DS
=-6V
V
GS
=-4.5V
I
D
=-2.8A
V
DS
=-6V
V
GS
=0V
f=1MH
z
V
DD
=-6V
R
L
=6
Ω
I
D
=-1A
V
GEN
=-4.5V
R
G
=6
Ω
4.8 8
1.0
nC
1.0
485
85
pF
40
10 16
13 23
nS
18 25
15 20
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST3413A 2006 V1
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