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TTA1943 Просмотр технического описания (PDF) - Toshiba
Номер в каталоге
Компоненты Описание
производитель
TTA1943
TOSHIBA Transistor Silicon PNP Epitaxial Type
Toshiba
TTA1943 Datasheet PDF : 5 Pages
1
2
3
4
5
TTA1943
-16
Common emitter
Tc
=
25°C
Single pulse test
-12
I
C
– V
CE
-8
-400mA
-300mA
-200mA
-150mA
-100mA
-60mA
-4
-40mA
IB
=−
20mA
0
0
-2
-4
-6
-8
-10
Collector-emitter voltage V
CE
(V)
V
CE (sat)
– I
C
-10
-1
-0.1
25°C
−
55°C
Tc
=
100°C
-0.01
-0.00
-0.001 -0.01
-0.1
Common emitter
I
C
/I
B
=
10
Single pulse test
-1
-10
-100
Collector current I
C
(A)
I
C
– V
BE
-16
-12
-8
-4
0
0
Tc
=
100°C
−
55°C
25°C
Common emitter
V
CE
=
-5 V
Single pulse test
-0.4 -0.8 -1.2 -1.6 -2.0 -2.4
Base-emitter voltage V
BE
(V)
1000
h
FE
– I
C
Tc
=
100°C
100
25°C
−
55°C
10
Common emitter
V
CE
=
-5 V
Single pulse test
1
-0.001 -0.01 -0.1
-1
-10
Collector current I
C
(A)
-100
V
BE (sat)
– I
C
-10
-1
-55°C
Tc
=
100°C
25°C
-0.1
-0.001 -0.01 -0.1
Common emitter
I
C
/I
B
=
10
Single pulse test
-1
-10
-100
Collector current I
C
(A)
P
C
-
Tc
200
150
Infinite heat sink
100
50
0
0
5
A
0
mbient tem
1
p
0
e
0
rature Ta
15
(
0
°C)
200
Ambient temperature Tc (°C)
3
2009-07-13
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