2SK3659 Просмотр технического описания (PDF) - NEC => Renesas Technology

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производитель

2SK3659

MOS FIELD EFFECT TRANSISTOR

NEC => Renesas Technology 

PACKAGE DRAWING (Unit: mm)

Isolated TO-220 (MP-45F)

10.0±0.3

4.5±0.2

φ 3.2±0.2

2.7±0.2

0.7±0.1

2.54 TYP.

1.3±0.2

1.5±0.2

2.54 TYP.

2.5±0.1

0.65±0.1

123

1.Gate

2.Drain

3.Source

2SK3659

EQUIVALENT CIRCUIT

Drain

Gate

Body

Diode

Gate

Protection

Diode

Source

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage

exceeding the rated voltage may be applied to this device.

Data Sheet D16251EJ2V0DS

7

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