K3057 Просмотр технического описания (PDF) - NEC => Renesas Technology
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K3057 Datasheet PDF : 8 Pages
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2SK3057
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
40
VGS = 4 V
30
VGS = 10 V
20
10
0
ID = 20 A
−50
0
50 100 150
Tch - Channel Temperature - ˚C
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
100
VGS = 0
f = 1 MHz
10
1
0.1
0.1
Ciss
Coss
Crss
1
10
100
VDS - Drain to Source Voltage - V
1000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 100 A/µs
VGS = 0
100
10
1
0.1
1
10
100
IF - Drain Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
VGS = 10 V
10
1
0.1
0
VGS = 0 V
0.5
1
Pulsed
1.5
VSD - Source to Drain Voltage - V
10000
SWITCHING CHARACTERISTICS
VDD = 30 V
VGS = 10 V
RG = 10 Ω
1000
100
10
tr
tf
td(off)
td(on)
0.1
1
10
100
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
80
ID = 45 A 16
VGS = 10 V 14
60
12
VDD = 12 V
30 V
10
48 V
40
8
6
20
4
2
0
0
20
40
60
80
QG - Gate Charge - nC
Data Sheet D13096EJ1V0DS00
5
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