N25Q128A13ESEH0E Просмотр технического описания (PDF) - Micron Technology

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производитель

N25Q128A13ESEH0E

128Mb, 3V, Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB Sector Erase

Micron Technology 

Memory Map – 128Mb Density

128Mb, 3V, Multiple I/O Serial Flash Memory

Memory Map – 128Mb Density

Table 2: Sectors[255:0]

Sector

255

⋮

127

⋮

63

⋮

0

Subsector

4095

⋮

4080

⋮

2047

⋮

2032

⋮

1023

⋮

1008

⋮

15

⋮

0

Start

00FF F000h

⋮

00FF 0000h

⋮

007F F000h

⋮

007F 0000h

⋮

003F F000h

⋮

003F 0000h

⋮

0000 F000h

⋮

0000 0000h

Address Range

End

00FF FFFFh

⋮

00FF 0FFFh

⋮

007F FFFFh

⋮

007F 0FFFh

⋮

003F FFFFh

⋮

003F 0FFFh

⋮

0000 FFFFh

⋮

0000 0FFFh

PDF: 09005aef845665fe

n25q_128mb_3v_65nm.pdf - Rev. P 06/13 EN

13

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