UML2N(RevA) Просмотр технического описания (PDF) - ROHM Semiconductor

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Компоненты Описание

производитель

UML2N
(Rev.:RevA)

Low-frequency transistor (isolated transistor and diode)

ROHM Semiconductor 

Transistors

UML2N

0.5

0.2

Ta=100°C

0.1

25°C

−55°C

0.05

IC/IB=10

0.5

0.2

Ta=100°C

25°C

−55°C

0.1

0.05

IC/IB=50

500

200

Ta=25°C

VCE=6V

0.02

0.02

0.01

0.2 0.5 1 2 5 10 20 50 100 200

COLLECTOR CURRENT : IC (mA)

0.01

0.2

0.5 1 2 5 10 20 50 100

COLLECTOR CURRENT : IC (mA)

Fig.7 Collector-emitter saturation

voltage vs. collector current ( Ι )

Fig.8 Collector-emitter saturation

voltage vs. collector current (ΙΙ)

100

50

−0.5 −1 −2

−5 −10 −20 −50 −100

EMITTER CURRENT : IE (mA)

Fig.9 Gain bandwidth product vs.

emitter current

20

10

Cib

5

Ta=25°C

f=1MHz

IE=0A

IC=0A

2

Cob

1

0.2 0.5 1 2

5 10 20 50

COLLECTOR TO BASE VOLTAGE : VCB (V)

EMITTER TO BASE VOLTAGE : VEB (V)

Fig.10 Collector output capacitance vs.

collector-base voltage

Emitter input capacitance vs.

emitter-base voltage

Ta=25°C

200

f=32MHZ

VCB=6V

100

50

20

10

−0.2

−0.5 −1

−2

−5 −10

EMITTER CURRENT : IE (mA)

Fig.11 Base-collector time constant

vs. emitter current

Di

50

1000

20

10

100

5

Ta=85°C

10

2

50°C

25°C

1

0°C

1

0.5

−30°C

0.1

0.2

Ta=100°C

75°C

50°C

25°C

0°C

−25°C

0.1

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

FORWARD VOLTAGE : VF (V)

Fig.12 Forward characteristics

0.010

10 20 30 40 50 60 70 80

REVERSE VOLTAGE : VR (V)

Fig.13 Reverse characteristics

f=1MHz

4

2

N Type

0

0 2 4 6 8 10 12 14 16 18 20

REVERSE VOLTAGE : VR (V)

Fig.14 Capacitance between

terminals characteristics

Rev.A

3/4

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