UML2N(RevA) Просмотр технического описания (PDF) - ROHM Semiconductor
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UML2N Datasheet PDF : 5 Pages
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Transistors
zElectrical characteristics (Ta=25°C)
Tr
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Symbol
BVCEO
BVCBO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Di
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time
Symbol
VF
IR
CT
trr
UML2N
Min.
50
60
6
−
−
−
120
−
−
Typ.
−
−
−
−
−
−
−
180
2
Max.
−
−
−
0.1
0.1
0.4
560
−
3.5
Unit
V
V
V
µA
µA
V
−
MHz
pF
Conditions
IC=1mA
IC=50µA
IE=50µA
VCB=60V
VEB=5V
IC/IB=50mA/5mA
VCE=6V, IC=1mA
VCE=12V, IE=−2mA, f=100MHz
VCB=12V, IE=0A, f=1MHz
Min.
−
−
−
−
Typ.
−
−
−
−
Max.
1.2
0.1
3.5
4
Unit
Conditions
V IF=100mA
µA VR=70V
pF VR=6V, f=1MHz
ns VR=6V, IF=5mA, RL=50Ω
zElectrical characteristic curves
Tr
50
VCE=6V
20
10
5
2
1
0.5
0.2
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded emitter propagation
characteristics
100 Ta=25°C
80
60
40
20
0.50mA
00..4450mmAA
0.35mA
0.30mA
0.25mA
0.20mA
0.15mA
0.10mA
0.05mA
0
IB=0A
0
0.4
0.8
1.2 1.6
2.0
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Grounded emitter output
characteristics ( Ι )
10
Ta=25°C
8
30µA
27µA
24µA
21µA
6
18µA
15µA
4
12µA
9µA
6µA
2
3µA
0
IB=0A
0
4
8
12
16
20
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.3 Grounded emitter output
characteristics ( ΙΙ )
500
Ta=25°C
200
100
50
VCE=5V
3V
1V
20
10
0.2 0.5 1 2 5 10 20 50 100 200
COLLECTOR CURRENT : IC (mA)
Fig.4 DC current gain vs.
collector current ( Ι )
500
0.5
Ta=100°C
VCE=5V
Ta=25°C
200
25°C
−55°C
100
0.2
IC/IB=50
0.1
20
10
50
0.05
20
10
0.2 0.5 1 2 5 10 20 50 100 200
COLLECTOR CURRENT : IC (mA)
Fig.5 DC current gain vs.
collector current ( ΙΙ )
0.02
0.01
0.2 0.5 1 2 5 10 20 50 100 200
COLLECTOR CURRENT : IC (mA)
Fig. 6 Collector-emitter saturation
voltage vs. collector current
Rev.A
2/4
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