NGTB20N135IHRWG Просмотр технического описания (PDF) - ON Semiconductor
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NGTB20N135IHRWG Datasheet PDF : 10 Pages
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NGTB20N135IHRWG
THERMAL CHARACTERISTICS
Rating
Thermal resistance junction−to−case
Thermal resistance junction−to−ambient
Symbol
RqJC
RqJA
Value
0.38
40
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
Symbol
Min
Typ
Max Unit
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
VGE = 0 V, IC = 5 mA
V(BR)CES 1350
−
−
V
Collector−emitter saturation voltage
VGE = 15 V, IC = 20 A
VGE = 15 V, IC = 20 A, TJ = 175°C
VCEsat
−
2.20 2.65
V
−
2.40
−
Gate−emitter threshold voltage
VGE = VCE, IC = 250 mA
VGE(th)
4.5
5.5
6.5
V
Collector−emitter cut−off current, gate−
VGE = 0 V, VCE = 1350 V
ICES
−
−
0.5
mA
emitter short−circuited
VGE = 0 V, VCE = 1350 V, TJ = 175°C
−
−
2.0
Gate leakage current, collector−emitter
short−circuited
VGE = 20 V, VCE = 0 V
IGES
−
−
100
nA
DYNAMIC CHARACTERISTIC
Input capacitance
Output capacitance
Reverse transfer capacitance
VCE = 20 V, VGE = 0 V, f = 1 MHz
Gate charge total
Gate to emitter charge
Gate to collector charge
VCE = 600 V, IC = 20 A, VGE = 15 V
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Cies
Coes
Cres
Qg
Qge
Qgc
−
5290
−
pF
−
124
−
−
100
−
−
234
−
nC
−
39
−
−
105
−
Turn−off delay time
Fall time
Turn−off switching loss
Turn−off delay time
Fall time
Turn−off switching loss
DIODE CHARACTERISTIC
TJ = 25°C
VCC = 600 V, IC = 20 A
Rg = 10 W
VGE = 0 V/ 15V
TJ = 150°C
VCC = 600 V, IC = 20 A
Rg = 10 W
VGE = 0 V/ 15V
td(off)
tf
Eoff
td(off)
tf
Eoff
−
245
−
ns
−
175
−
−
0.60
−
mJ
−
270
−
ns
−
290
−
−
1.40
−
mJ
Forward voltage
VGE = 0 V, IF = 20 A
VF
−
1.80 2.10
V
VGE = 0 V, IF = 20 A, TJ = 175°C
−
2.70
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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