NVTJD4001N Просмотр технического описания (PDF) - ON Semiconductor
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NVTJD4001N Datasheet PDF : 5 Pages
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NTJD4001N, NVTJD4001N
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
50
5
VDS = 0 V VGS = 0 V
TJ = 25°C
QG
40 Ciss
4
30 Crss
20
10
0
10
5
0
5
VGS VDS
10 15
Ciss
Coss
Crss
20 25
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
0.1
0.08
VGS = 0 V
TJ = 25°C
3
QGS
2
QGD
1
ID = 0.1 A
TJ = 25°C
0
0
0.2
0.4
0.6
0.8
1
QG, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source Voltage vs. Total
Gate Charge
0.06
0.04
0.02
0
0.5
0.55
0.6
0.65
0.7
0.75
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Diode Forward Voltage vs. Current
1000
D = 0.5
100 0.2
0.1
0.05
0.02
10
0.01
1
SINGLE PULSE
0.000001 0.00001
0.0001
0.001
0.01
0.1
PULSE TIME t,(s)
1
10
100
1000
Figure 10. Thermal Response
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4
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