NVTJD4001N Просмотр технического описания (PDF) - ON Semiconductor
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NVTJD4001N Datasheet PDF : 5 Pages
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NTJD4001N, NVTJD4001N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V, ID = 100 mA
30
56
V
mV/ °C
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
IDSS
IGSS
VGS = 0 V, VDS = 30 V
VDS = 0 V, VGS = ±10 V
1.0
mA
±1.0
mA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Gate Threshold Temperature
Coefficient
VGS(TH)
VGS(TH)/TJ
VGS = VDS, ID = 100 mA
0.8
1.2
1.5
V
−3.2
mV/ °C
Drain−to−Source On Resistance
Forward Transconductance
RDS(on)
gFS
VGS = 4.0 V, ID = 10 mA
VGS = 2.5 V, ID = 10 mA
VDS = 3.0 V, ID = 10 mA
1.0
1.5
W
1.5
2.5
80
mS
CHARGES AND CAPACITANCES
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
SWITCHING CHARACTERISTICS (Note 3)
VGS = 0 V, f = 1.0 MHz,
VDS = 5.0 V
VGS = 5.0 V, VDS = 24 V,
ID = 0.1 A
20
33
pF
19
32
7.25
12
0.9
1.3
nC
0.2
0.3
0.2
Turn−On Delay Time
Rise Time
td(ON)
tr
VGS = 4.5 V, VDD = 5.0 V,
ID = 10 mA, RG = 50 W
17
ns
23
Turn−Off Delay Time
td(OFF)
94
Fall Time
tf
82
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V,
TJ = 25°C
IS = 10 mA
TJ = 125°C
0.65
0.7
V
0.45
Reverse Recovery Time
tRR
VGS = 0 V, dIS/dt = 8.0 A/ms,
12.4
ns
IS = 10 mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
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