NTD20N03L27G Просмотр технического описания (PDF) - ON Semiconductor
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NTD20N03L27G Datasheet PDF : 6 Pages
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NTD20N03L27
2500
200
VGS − VDS
1500
Ciss
1000
500
Coss
Crss
0
10 8 6 4 2 0 2 4 6 8 10 12 14 16 18 20 23 25
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
12
Q
10
8
6
Q1
4
VGS
Q2
2
ID = 20 A
TJ = 25°C
0
0
2
4
6
8
10 12 14
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1000
tr
100
tf
td(off)
10
td(on)
1
1
VDS = 20 V
ID = 20 A
VGS = 5.0 V
TJ = 25°C
10
100
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
20
18
VGS = 0 V
TJ = 25°C
16
14
12
10
8
6
4
2
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage vs. Current
350
ID = 24 A
300
250
200
150
100
50
0
25
50
75
100
125
150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Avalanche Energy vs.
Starting Junction Temperature
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