LH28F016SU Просмотр технического описания (PDF) - Sharp Electronics

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LH28F016SU

16M (1M × 16, 2M × 8) Flash Memory

Sharp Electronics 

16M (1M × 16, 2M × 8) Flash Memory

LH28F016SU

DC Characteristics (Continued)

VCC = 5.0 V ± 0.5 V, TA = 0°C to +70°C

3.5 » Pin Set Low for 5 V Operations

SYMBOL

PARAMETER

IPPR VPP Read Current

IPPW VPP Write Current

TYPE

65

40

IPPE VPP Erase Current

20

IPPES

VPP Erase Suspend

Current

65

VIL Input Low Voltage

VIH Input High Voltage

VOL Output Low Voltage

VOH1

VOH2

Output High Voltage

VPPL

VPP during Normal

Operations

VPPH

VPP during Write/Erase

Operations

5.0

VLKO

VCC Erase/Write

Lock Voltage

MIN.

MAX. UNITS

TEST CONDITIONS

200

µA VPP > VCC

60

mA

VPP = VPPH, Word/Byte

Write in Progress

40

mA

VPP = VPPH,

Block Erase in Progress

200

µA

VPP = VPPH,

Block Erase Suspended

-0.5

0.8

V

2.0

VCC + 0.5 V

0.45

V

VCC = VCC MIN. and

IOL = 5.8 mA

0.85 VCC

V

IOH = -2.5 mA

VCC = VCC MIN.

VCC - 0.4

V

IOH = -100 µA

VCC = VCC MIN.

0.0

5.5

V

4.5

5.5

V

2.0

V

NOTE

1

1

1

1

NOTES:

1. All currents are in RMS unless otherwise noted. Typical values at VCC = 5.0 V, VPP = 5.0 V, T = 25°C. These currents are valid for all

product versions (package and speeds).

2. ICCES is specified with the device de-selected. If the device is read while in erase suspend mode, current draw is the sum of

ICCES and ICCR.

3. Automatic Power Saving (APS) reduces ICCR to less than 2 mA in Static operation.

4. CMOS inputs are either VCC ± 0.2 V or GND ± 0.2 V. TTL Inputs are either VIL or VIH.

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